Chair of Funktionalized Microelectronics for Heterogeneous Systems (gB/IPMS)

Organisational unit: Joint appointment

Organisation profile

Former Chair Holder: Prof. Dr.-Ing. Hubert Lakner

Contact

TUD website: https://tu-dresden.de/ing/elektrotechnik/ihm/oes

Parent units

Institute of Semiconductors and Microsystems

Keywords

Research Focus

Theory and Experiment of Antiferroelectric (AFE) Si-Doped Hafnium Oxide (HSO) Enhanced Floating-Gate Memory

Ali, T., Polakowski, P., Buttner, T., Kampfe, T., Rudolph, M., Patzold, B. & Hoffmann, R. & 8 others, Czernohorsky, M., Kuhnel, K., Steinke, P., Zimmermann, K., Biedermann, K., Eng, L. M., Seidel, K. & Muller, J., Aug 2019, In: IEEE Transactions on Electron Devices. 66, 8, p. 3356-3364 9 p., 8744290.

Research output: Contribution to journal › Research article › Contributed › peer-review

Quasi-statischer MOEMS-Gitterscanner zum spektralen Durchstimmen eines MIR-Quantenkaskadenlasers

Merten, A., Schroedter, R., Dreyhaupt, A., Graßhoff, T., Schwarzenberg, M., Hugger, S. & Schilling, C. & 2 others, Grahmann, J. & Ostendorf, R., Mar 2019, In: Technisches Messen : tm ; Sensoren, Geräte, Systeme. 86, 3, p. 131-143

Research output: Contribution to journal › Research article › Contributed › peer-review

Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors

Mulaosmanovic, H., Ocker, J., Müller, S., Schroeder, U., Müller, J., Polakowski, P. & Flachowsky, S. & 3 others, Bentum, R. V., Mikolajick, T. & Slesazeck, S., 1 Feb 2017, In: ACS applied materials & interfaces. 9, 4, p. 3792–3798 7 p.

Research output: Contribution to journal › Research article › Contributed › peer-review

A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs

Trentzsch, M., Flachowsky, S., Richter, R., Paul, J., Reimer, B., Utess, D. & Jansen, S. & 11 others, Mulaosmanovic, H., Muller, S., Slesazeck, S., Ocker, J., Noack, M., Muller, J., Polakowski, P., Schreiter, J., Beyer, S., Mikolajick, T. & Rice, B., 31 Jan 2017, 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers (IEEE), p. 11.5.1-11.5.4 7838397. (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review

Novel ferroelectric FET based synapse for neuromorphic systems

Mulaosmanovic, H., Ocker, J., Muller, S., Noack, M., Muller, J., Polakowski, P. & Mikolajick, T. & 1 others, Slesazeck, S., 2017, Digest of Technical Papers - Symposium on VLSI Technology.

Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review

View all research output (24)

ECS Journal of Solid State Science and Technology : JSS

ISSNs: 2162-8769

Additional searchable ISSN (electronic): 2162-8777

Electrochemical Society Inc., United States of America

Scopus rating (2025): CiteScore 4.5 SJR 0.389 SNIP 0.592

Journal

Proceedings of SPIE : Vol. 9798

ISSNs: 0277-786X, 0361-0748, 0038-7355

SPIE - The international society for optics and photonics

Scopus rating (2025): CiteScore 0.5 SJR 0.138 SNIP 0.141

Journal: Book series

Japanese Journal of Applied Physics, Part 2: Letters

ISSNs: 0021-4922, 1347-4065

Institute of Physics

Journal

Microelectronic Engineering

ISSNs: 0167-9317

Elsevier Science B.V., Netherlands

Scopus rating (2025): CiteScore 7.4 SJR 0.595 SNIP 1.076

Journal

Technisches Messen : tm ; Sensoren, Geräte, Systeme

ISSNs: 0171-8096, 0340-837X

Additional searchable ISSN (electronic): 2196-7113

De Gruyter Brill, Germany

Scopus rating (2025): CiteScore 1.7 SJR 0.257 SNIP 0.507

Journal

View all journals (11)

Research Portal of the TU Dresden

Chair of Funktionalized Microelectronics for Heterogeneous Systems (gB/IPMS)

Organisation profile

Contact

Parent units

Keywords

Research Focus

Related content and researchers (public profile)

Theory and Experiment of Antiferroelectric (AFE) Si-Doped Hafnium Oxide (HSO) Enhanced Floating-Gate Memory

Quasi-statischer MOEMS-Gitterscanner zum spektralen Durchstimmen eines MIR-Quantenkaskadenlasers

Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors

A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs

Novel ferroelectric FET based synapse for neuromorphic systems

ECS Journal of Solid State Science and Technology : JSS

Proceedings of SPIE : Vol. 9798

Japanese Journal of Applied Physics, Part 2: Letters

Microelectronic Engineering

Technisches Messen : tm ; Sensoren, Geräte, Systeme