A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs
Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review
Contributors
Abstract
We successfully implemented a one-transistor (1T) ferroelectric field effect transistor (FeFET) eNVM into a 28nm gate-first super low power (28SLP) CMOS technology platform using two additional structural masks. The electrical baseline properties remain the same for the FeFET integration and the JTAG-controlled 64 kbit memory shows clearly separated states. High temperature retention up to 250 °C is demonstrated and endurance up to 105 cycles was achieved. The FeFET unique properties make it the best candidate for eNVM solutions in sub-2x technologies for low-cost IoT applications.
Details
| Original language | English |
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| Title of host publication | 2016 IEEE International Electron Devices Meeting, IEDM 2016 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 11.5.1-11.5.4 |
| ISBN (electronic) | 9781509039012 |
| Publication status | Published - 31 Jan 2017 |
| Peer-reviewed | Yes |
Publication series
| Series | Technical Digest - International Electron Devices Meeting, IEDM |
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| ISSN | 0163-1918 |
Conference
| Title | 62nd IEEE International Electron Devices Meeting, IEDM 2016 |
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| Duration | 3 - 7 December 2016 |
| City | San Francisco |
| Country | United States of America |
External IDs
| ORCID | /0000-0003-3814-0378/work/169642623 |
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