Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Details
Original language | English |
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Pages (from-to) | 3792–3798 |
Number of pages | 7 |
Journal | ACS applied materials & interfaces |
Volume | 9 |
Issue number | 4 |
Publication status | Published - 1 Feb 2017 |
Peer-reviewed | Yes |
External IDs
Scopus | 85011702069 |
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