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Ferroelectricity in HfO 2 enables nonvolatile data storage in 28 nm HKMG

Research output: Contribution to book/conference proceedings/anthology/report › Conference contribution › Contributed › peer-review

Contributors

J. Müller - (Author)
Ekaterina Yurchuk - (Author)
T. Schlösser - (Author)
J. Paul - (Author)
R. Hoffmann - (Author)
S. Müller - (Author)
D. Martin - (Author)
Stefan Slesazeck - (Author)
P. Polakowski - , Chair of Opto-Electronic Components and Systems (Author)
J. Sundqvist - , Chair of Semiconductors (Author)
M. Czernohorsky - (Author)
K. Seidel - (Author)
P. Kücher - (Author)
R. Boschke - (Author)
M. Trentzsch - (Author)
K. Gebauer - (Author)
U. Schröder - (Author)
T. Mikolajick - , Chair of Nanoelectronics (Author)

Details

Original language	English
Title of host publication	VLSI
Publication status	Published - 2012
Peer-reviewed	Yes

External IDs

Scopus	84866536057

Keywords