Ferroelectricity in HfO 2 enables nonvolatile data storage in 28 nm HKMG
Research output: Contribution to book/conference proceedings/anthology/report › Conference contribution › Contributed › peer-review
Contributors
Details
Original language | English |
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Title of host publication | VLSI |
Publication status | Published - 2012 |
Peer-reviewed | Yes |
External IDs
Scopus | 84866536057 |
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