Analysis of threshold voltage instability in AlGaN/GaN MISHEMTs by forward gate voltage stress pulses

Research output: Contribution to journalResearch articleContributedpeer-review

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Details

Original languageEnglish
Pages (from-to)1246-1251
Number of pages6
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume213
Issue number5
Publication statusPublished - 18 Jan 2016
Peer-reviewedYes

External IDs

Scopus 84968866570

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