IEEE Transactions on Electron Devices

ISSNs: 0018-9383, 0096-2430, 0197-6370, 1557-9646

Additional searchable ISSN (electronic): 2379-8661

Institute of Electrical and Electronics Engineers Inc., United States of America

Scopus rating (2023): CiteScore 5.8 SJR 0.785 SNIP 1.223

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29 Research output

2024

Embedded Silicon–Germanium-Based Thermoelectric Devices on 300-mm Wafer
Schwinge, C., Hoffmann, R., Biedermann, K., Czernohorsky, M., Kannan, J., Rudolph, M. & Mende, F. & 3 others, Wagner-Reetz, M., Gerlach, G. & Weinreich, W., 12 Nov 2024, In: IEEE Transactions on Electron Devices. 71 (2024), 12, p. 7794-7801 8 p.
Research output: Contribution to journal › Research article › Contributed › peer-review
Published
Degradation of Nonhysteretic Switching in HZO-Al₂O₃Stacks Due to Positive Unipolar Stress
Engl, M., Mikolajick, T. & Slesazeck, S., 1 Feb 2024, In: IEEE Transactions on Electron Devices. 71, 2, p. 1060-1065 6 p.
Research output: Contribution to journal › Research article › Contributed › peer-review
Published
DC and AC Performance of InGaZnO Thin-Film Transistors on Flexible PEEK Substrate
Husain, Q. Z., Corsino, D., Catania, F., Ishida, K., Meister, T., Ellinger, F. & Münzenrieder, N. & 1 others, Cantarella, G., 2024, In: IEEE Transactions on Electron Devices. 71, 10, p. 6073-6078 6 p.
Research output: Contribution to journal › Research article › Contributed › peer-review
Published
On the Potential of Ambipolar Schottky-Based Ferroelectric Transistor Designs for Enhanced Memory Windows in Scaled Devices
Thesberg, M., Obukhova, T., Deleruyelle, D., Trommer, J., Mikolajick, T., Baumgartner, O. & Schanovsky, F. & 2 others, Stanojevic, Z. & Karner, M., 2024, In: IEEE Transactions on Electron Devices. 71(2024), 11, p. 6686-6690 5 p.
Research output: Contribution to journal › Research article › Contributed › peer-review
Published
Stochastic Resonance in HfO₂-Based Memristors: Impact of External Noise on the Binary STDP Protocol
Salvador, E., Rodriguez Martinez, R., Miranda, E., Martin-Martinez, J., Rubio, A., Ntinas, V. & Sirakoulis, G. C. & 2 others, Crespo-Yepes, A. & Nafria, M., 2024, In: IEEE Transactions on Electron Devices. 71, 9, p. 5761-5766 6 p.
Research output: Contribution to journal › Research article › Contributed › peer-review

2023

AC Performance Tunability of Flexible Bottom-Gate InGaZnO TFTs by an Additional Top-Gate Contact
Catania, F., Saeedzadeh Khaanghah, N., Corsino, D., Oliveira, H. D. S., Carrasco-Pena, A., Ishida, K. & Meister, T. & 3 others, Ellinger, F., Cantarella, G. & Munzenrieder, N., 1 Dec 2023, In: IEEE Transactions on Electron Devices. 70, 12, p. 6359-6363 5 p.
Research output: Contribution to journal › Research article › Contributed › peer-review
Published

2022

Optimizing Ferroelectric and Interface Layers in HZO-Based FTJs for Neuromorphic Applications
Sünbül, A., Ali, T., Mertens, K., Revello, R., Lehninger, D., Müller, F. & Lederer, M. & 11 others, Kühnel, K., Rudolph, M., Oehler, S., Hoffmann, R., Zimmermann, K., Biedermann, K., Schramm, P., Czernohorsky, M., Seidel, K., Kämpfe, T. & Eng, L. M., 1 Feb 2022, In: IEEE Transactions on Electron Devices. 69, 2, p. 808-815 8 p.
Research output: Contribution to journal › Research article › Contributed › peer-review
Published
High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-Kb HfO₂: Si-Based 1T-1C FeRAM Arrays: Si-Based 1T-1C FeRAM Arrays
Francois, T., Coignus, J., Makosiej, A., Giraud, B., Carabasse, C., Barbot, J. & Martin, S. & 14 others, Castellani, N., Magis, T., Grampeix, H., Van Duijn, S., Mounet, C., Chiquet, P., Schroeder, U., Slesazeck, S., Mikolajick, T., Nowak, E., Bocquet, M., Barrett, N., Andrieu, F. & Grenouillet, L., 1 Jan 2022, In: IEEE transactions on electron devices : ED. 69, 4, p. 2108-2114 7 p.
Research output: Contribution to journal › Research article › Contributed › peer-review
Published

2021

Tunability of Ferroelectric Hafnium Zirconium Oxide for Varactor Applications
Abdulazhanov, S., Lederer, M., Lehninger, D., Mart, C., Ali, T., Wang, D. & Olivo, R. & 3 others, Emara, J., Kampfe, T. & Gerlach, G., Oct 2021, In: IEEE Transactions on Electron Devices. 68, 10, p. 5269-5276 8 p.
Research output: Contribution to journal › Research article › Contributed › peer-review
Published
Effect of the Si Doping Content in HfO2 Film on the Key Performance Metrics of Ferroelectric FETs
Mulaosmanovic, H., Dunkel, S., Kleimaier, D., Kacimi, A. E., Beyer, S., Breyer, E. T. & Mikolajick, T. & 1 others, Slesazeck, S., Sept 2021, In: IEEE transactions on electron devices : ED. 68, 9, p. 4773-4779 7 p., 9507084.
Research output: Contribution to journal › Research article › Contributed › peer-review
Published

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