Degradation of Nonhysteretic Switching in HZO-Al2O3Stacks Due to Positive Unipolar Stress

Research output: Contribution to journalResearch articleContributedpeer-review


  • Moritz Engl - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Thomas Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Stefan Slesazeck - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)


The presented measurement procedure in (Engl et al., 2023) is used to characterize the degradation of the hysteresis-free charge amplification in unipolar operation of stabilized negative capacitance capacitors. Two degradation processes, namely, remanent switching of domains and a change in the internal electric bias field, can be shown with this procedure and are here extended with PUND measurements to get further insides into the degradation mechanism. All characterizations were performed on double-layer stacks of Hf0.5Zr0.5O2 (HZO) and Al2O3 films featuring respective thicknesses of 11 and 4 nm.


Original languageEnglish
Pages (from-to)1060-1065
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number2
Publication statusPublished - 1 Feb 2024

External IDs

ORCID /0000-0003-3814-0378/work/156338415



  • Degradation, ferroelectric, hafnium zirconium oxide, measurement, negative capacitance (nc), reliability