High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-Kb HfO₂: Si-Based 1T-1C FeRAM Arrays: Si-Based 1T-1C FeRAM Arrays
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Abstract
16-kb 1T-1C ferroelectric random access memory (FeRAM) arrays are demonstrated for 130-nm node technology with TiN/HfO2:Si/TiN ferroelectric capacitors integrated into the back-end-of-line (BEOL). The 0- A nd 1-state distributions measured on the arrays demonstrate perfect yield at 4.8-V operation, with extrapolations suggesting that the memory window (MW) is still open at six-sigma statistics. A programming speed down to 4 ns at 4 V is highlighted at the array level, together with an endurance up to 107 cycles. Promising data retention up to 104 s at 125 °C is measured on the arrays and, for the first time, solder reflow compatibility is demonstrated for HfO2-based FeRAM. The MW on 16-kb arrays remains open when using a 2.5-V programming voltage and when the capacitor area is decreased from 0.36 μm2 down to 0.16 μm2, with a calculated programming energy lower than 100 fJ/bit. These results pave the way to competitive ultralow-power embedded nonvolatile memories (NVM) at more advanced nodes.
Details
Original language | English |
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Pages (from-to) | 2108-2114 |
Number of pages | 7 |
Journal | IEEE transactions on electron devices : ED |
Volume | 69 |
Issue number | 4 |
Publication status | Published - 1 Jan 2022 |
Peer-reviewed | Yes |
External IDs
unpaywall | 10.1109/ted.2021.3138360 |
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ORCID | /0000-0003-3814-0378/work/142256124 |
Keywords
DFG Classification of Subject Areas according to Review Boards
ASJC Scopus subject areas
Keywords
- 130-nm technology node, 16-kb array, data retention, emerging memory, endurance, ferroelectric memories, ferroelectric random access memory (FeRAM), hafnium oxide, HfO2:Si, nonvolatile memory (NVM), solder reflow