16-kb 1T-1C ferroelectric random access memory (FeRAM) arrays are demonstrated for 130-nm node technology with TiN/HfO2:Si/TiN ferroelectric capacitors integrated into the back-end-of-line (BEOL). The 0- A nd 1-state distributions measured on the arrays demonstrate perfect yield at 4.8-V operation, with extrapolations suggesting that the memory window (MW) is still open at six-sigma statistics. A programming speed down to 4 ns at 4 V is highlighted at the array level, together with an endurance up to 107 cycles. Promising data retention up to 104 s at 125 °C is measured on the arrays and, for the first time, solder reflow compatibility is demonstrated for HfO2-based FeRAM. The MW on 16-kb arrays remains open when using a 2.5-V programming voltage and when the capacitor area is decreased from 0.36 μm2 down to 0.16 μm2, with a calculated programming energy lower than 100 fJ/bit. These results pave the way to competitive ultralow-power embedded nonvolatile memories (NVM) at more advanced nodes.