TaN metal gate damage during high-k (Al2O3) high-temperature etch

Research output: Contribution to journal › Research article › Contributed › peer-review

Contributors

  • M. Ackermann - (Author)
  • L. Bach - (Author)
  • M. F. Beug - (Author)
  • U. Bewersdorff-Sarlette - (Author)
  • V. Beyer - (Author)
  • N. Chan - (Author)
  • M. Czernohorsky - (Author)
  • R. Knofler - (Author)
  • C. Ludwig - (Author)
  • P. Michalowski - (Author)
  • T. Mikolajick - , Chair of Nanoelectronics (Author)
  • J. Paul - (Author)
  • A. Tilke - (Author)
  • S. Wege - (Author)

Details

Original languageEnglish
Pages (from-to)949 - 952
JournalMicroelectronic Engineering
Volume86
Issue number4-6
Publication statusPublished - 2009
Peer-reviewedYes

External IDs

Scopus 67349197835

Keywords

Library keywords