Reliability Improvement from La2O3 Interfaces in Hf0.5Zr0.5O2-Based Ferroelectric Capacitors
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Abstract
Further optimization of a typically reported ferroelectric capacitor comprised of a Hf0.5Zr0.5O2 ferroelectric thin film with TiN electrodes is explored by introducing an additional non-ferroelectric La2O3 interfacial layer evaluated at different positions in the capacitor stack. The role of the interface to the ferroelectric layer is investigated and discussed, with the main focus directed toward the reliability of the device for non-volatile memory applications. With this investigation, different degradation mechanisms determining electric field cycling and polarization retention are observed, and it is concluded that modifying the bottom interface between the electrode and the ferroelectric layer has the best potential to provide a benefit in device performance.
Details
Original language | English |
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Article number | 2202151 |
Number of pages | 10 |
Journal | Advanced materials interfaces |
Volume | 10 |
Issue number | 8 |
Publication status | Published - Mar 2023 |
Peer-reviewed | Yes |
External IDs
Mendeley | f9762e6c-aa72-3c27-b9db-2ea983832221 |
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WOS | 000928773500001 |
ORCID | /0000-0003-3814-0378/work/142256344 |
Keywords
Research priority areas of TU Dresden
DFG Classification of Subject Areas according to Review Boards
Subject groups, research areas, subject areas according to Destatis
ASJC Scopus subject areas
Keywords
- endurance, ferroelectric, Hf Zr O, interface, La O, reliability, retention, La 2O 3, Hf 0.5Zr 0.5O 2, Retention, Ferroelectric, La2O3, Endurance, Reliability, Hf0 5Zr0 5O2, Interface