Reliability Improvement from La2O3 Interfaces in Hf0.5Zr0.5O2-Based Ferroelectric Capacitors

Publikation: Beitrag in FachzeitschriftForschungsartikelBeigetragenBegutachtung

Beitragende

  • Furqan Mehmood - , Professur für Nanoelektronik, NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • Ruben Alcala - , NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • Pramoda Vishnumurthy - , NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • Bohan Xu - , NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • Ridham Sachdeva - , NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • Thomas Mikolajick - , Professur für Nanoelektronik, NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • Uwe Schroeder - , NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)

Abstract

Further optimization of a typically reported ferroelectric capacitor comprised of a Hf0.5Zr0.5O2 ferroelectric thin film with TiN electrodes is explored by introducing an additional non-ferroelectric La2O3 interfacial layer evaluated at different positions in the capacitor stack. The role of the interface to the ferroelectric layer is investigated and discussed, with the main focus directed toward the reliability of the device for non-volatile memory applications. With this investigation, different degradation mechanisms determining electric field cycling and polarization retention are observed, and it is concluded that modifying the bottom interface between the electrode and the ferroelectric layer has the best potential to provide a benefit in device performance.

Details

OriginalspracheEnglisch
Aufsatznummer2202151
Seitenumfang10
FachzeitschriftAdvanced materials interfaces
Jahrgang10
Ausgabenummer8
PublikationsstatusVeröffentlicht - März 2023
Peer-Review-StatusJa

Externe IDs

Mendeley f9762e6c-aa72-3c27-b9db-2ea983832221
WOS 000928773500001
ORCID /0000-0003-3814-0378/work/142256344

Schlagworte

Fächergruppen, Lehr- und Forschungsbereiche, Fachgebiete nach Destatis

ASJC Scopus Sachgebiete

Schlagwörter

  • endurance, ferroelectric, Hf Zr O, interface, La O, reliability, retention, La 2O 3, Hf 0.5Zr 0.5O 2, Retention, Ferroelectric, La2O3, Endurance, Reliability, Hf0 5Zr0 5O2, Interface