Reliability comparison of ZrO2-based DRAM high-k dielectrics under DC and AC stress

Research output: Contribution to journal › Research article › Contributed › peer-review

Contributors

  • S. Knebel - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • D. Zhou - , Dalian University of Technology (Author)
  • U. Schroeder - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • S. Slesazeck - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • M. Pešíc - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • R. Agaiby - , Global Foundries Dresden (Author)
  • J. Heitmann - , Freiberg University of Mining and Technology (Author)
  • T. Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH (Author)

Details

Original languageEnglish
Pages (from-to)324 - 330
JournalIEEE transactions on device and materials reliability
Volume17
Issue number2
Publication statusPublished - 2017
Peer-reviewedYes

External IDs

Scopus 85025624598

Keywords

Library keywords