Reliability comparison of ZrO<inf>2</inf>-based DRAM high-k dielectrics under DC and AC stress

Research output: Contribution to journal › Research article › Contributed › peer-review

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Details

Original languageEnglish
Pages (from-to)324 - 330
JournalIEEE transactions on device and materials reliability
Volume17
Issue number2
Publication statusPublished - 2017
Peer-reviewedYes

External IDs

Scopus 85025624598

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