Pseudo-vertical GaN-based trench gate metal oxide semiconductor field effect transistor

Research output: Contribution to book/conference proceedings/anthology/report › Conference contribution › Contributed › peer-review

Contributors

Details

Original languageEnglish
Title of host publicationASDAM 2016 - Conference Proceedings, 11th International Conference on Advanced Semiconductor Devices and Microsystems
Publication statusPublished - 2017
Peer-reviewedYes

External IDs

Scopus 85011048578

Keywords