Polycrystalline silicon gate originated CMOS device failure investigated by Scanning Spreading Resistance Microscopy

Research output: Contribution to journal › Research article › Contributed › peer-review

Contributors

  • S. Doering - (Author)
  • A. Wachowiak - (Author)
  • M. Rochel - (Author)
  • C. Nowak - (Author)
  • M. Hoffmann - , Infineon Technologies Dresden GmbH & Co. KG (Author)
  • U. Winkler - (Author)
  • M. Richter - (Author)
  • H. Roetz - (Author)
  • S. Eckl - (Author)
  • T. Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH (Author)

Details

Original languageEnglish
Pages (from-to)40-46
JournalMicroelectronic Engineering
Volume142
Publication statusPublished - 2015
Peer-reviewedYes

External IDs

Scopus 84938880632

Keywords

Library keywords