Physical and Circuit Modeling of HfO2 based Ferroelectric Memories and Devices

Research output: Contribution to book/conference proceedings/anthology/report › Conference contribution › Contributed › peer-review

Contributors

M. Pesic - , Faculty of Electrical and Computer Engineering (Author)
V. Di Lecce - (Author)
M. Hoffmann - , Chair of Nanoelectronics (Author)
H. Mulaosmanovic - (Author)
B. Max - , Work Group Cool Silicon, Chair of Nanoelectronics, Institute of Semiconductors and Microsystems (Author)
U. Schroeder - (Author)
S. Slesazeck - (Author)
L. Larcher - (Author)
T. Mikolajick - , Chair of Nanoelectronics (Author)

Original language	English
Title of host publication	2017 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S)
ISBN (electronic)	2573-5926
Publication status	Published - 2017
Peer-reviewed	Yes

ORCID	/0000-0003-3814-0378/work/142256132

ferroelectric memory, FeFET, modeling, synapse, neuromorphic, negative capacitance