Physical and circuit modeling of HfO2 based ferroelectric memories and devices

Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review

Contributors

  • M. Pesic - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • V. Di Lecce - , MDLSoft (Author)
  • M. Hoffmann - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • H. Mulaosmanovic - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • B. Max - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • U. Schroeder - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • S. Slesazeck - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • L. Larcher - , MDLSoft, University of Modena and Reggio Emilia (Author)
  • T. Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH (Author)

Details

Original languageEnglish
Title of host publication2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
Number of pages4
ISBN (electronic)978-1-5386-3766-1, 978-1-5386-3765-4
Publication statusPublished - 2018
Peer-reviewedYes

External IDs

Scopus 85047527232
WOS 000463041500001
ORCID /0000-0003-3814-0378/work/142256132

Keywords

Keywords

  • ferroelectric memory, FeFET, modeling, synapse, neuromorphic, negative capacitance