Normally-off operating GaN-based pseudovertical MOSFETs with MBE grown source region
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Details
Original language | English |
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Article number | 02D109 |
Journal | Journal of vacuum science & technology : JVST ; B, Nanotechnology & microelectronics : materials, processing, measurement, & phenomena |
Volume | 36 |
Issue number | 2 |
Publication status | Published - 2018 |
Peer-reviewed | Yes |
External IDs
WOS | 000428280500019 |
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Scopus | 85043269076 |