Investigation into socketed CDM (SDM) tester parasitics
Research output: Contribution to journal › Conference article › Contributed › peer-review
Contributors
Abstract
The ESD Association standards working group 5.3.2 is analyzing the procedure and stress that is applied to a device under test (DUT) using a socketed discharge model (SDM) test system, formerly referred to as socketed CDM. Our final goal is to define an SDM tester specification that will guarantee test result reproducibility across different test equipment. This paper investigates the effect of tester background parasitics on the discharge current waveforms of an SDM tester. Characteristic waveforms were studied and SDM testing was performed on actual devices. It is shown that SDM tester parasitics determine the stress applied to the DUT. This directly impacts the SDM failure threshold voltage levels and may lead to miscorrelation and non-reproducibility of test results across different SDM test systems. This paper empirically determines the relative contributions of the various tester parasitics to the total stress applied to the DUT. Our investigations indicate that the tester provides a 10-20 pF parasitic capacitance discharge into each pin of the device. Tester background parasitic elements play such an important role in the SDM discharge event that correlation between test systems built by different manufacturers is unlikely without completely duplicating a particular tester.
Details
Original language | English |
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Pages (from-to) | 1531-1540 |
Number of pages | 10 |
Journal | Microelectronics Reliability |
Volume | 39 |
Issue number | 11 |
Publication status | Published - Nov 1999 |
Peer-reviewed | Yes |
Conference
Title | Proceedings of the 1998 20th Annual International Electircal Overstress/Electrostatic Discharge (EOS/ESD) |
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Duration | 6 - 8 October 1998 |
City | Reno, NV, USA |
External IDs
ORCID | /0000-0002-0757-3325/work/139064984 |
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