Interplay between charge trapping and polarization switching in BEOL-compatible bilayer Ferroelectric Tunnel Junctions

Research output: Contribution to journalResearch articleContributedpeer-review


  • R. Fontanini - (Author)
  • J. Barbot - (Author)
  • M. Segatto - (Author)
  • S. Lancaster - (Author)
  • Q. Duong - (Author)
  • F. Driussi - (Author)
  • L. Grenouillet - (Author)
  • L. Triozon - (Author)
  • J. Coignus - (Author)
  • T. Mikolajick - , Chair of Nanoelectronics (Author)
  • S. Slesazeck - (Author)
  • D. Esseni - (Author)


We here report a joint experimental and theoretical analysis of polarization switching in ferroelectric tunnel junctions. Our results show that the injection and trapping of charge into the ferroelectric-dielectric stack has a large influence on the polarization switching. Our results are relevant to the physical understanding and to the design of the devices, and for both memory and memristor applications.


Original languageEnglish
Pages (from-to)593-599
Number of pages7
JournalIEEE journal of the Electron Devices Society
Publication statusPublished - 2022

External IDs

Mendeley 07e7e94d-f884-3026-b85d-8a1e5a077f9a
unpaywall 10.1109/jeds.2022.3171217
WOS 000836630300005
Scopus 85129606970
ORCID /0000-0003-3814-0378/work/142256122


DFG Classification of Subject Areas according to Review Boards


  • Dielectrics, Electrodes, FTJ, Ferroelectric tunnel junction, Films, HZO, Memristors, Switches, Tin, Tunneling, artificial intelligence, charge trapping, interfacial charge, neuromoprhic computing, polarization switching, synaptic memristor, Neuromoprhic Computing, Synaptic Memristor, Ferroelectric Tunnel Juction, Interfacial charge, Charge trapping, Polarization switching, Artificial Intelligence.