Interplay between charge trapping and polarization switching in BEOL-compatible bilayer Ferroelectric Tunnel Junctions
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Abstract
We here report a joint experimental and theoretical analysis of polarization switching in ferroelectric tunnel junctions. Our results show that the injection and trapping of charge into the ferroelectric-dielectric stack has a large influence on the polarization switching. Our results are relevant to the physical understanding and to the design of the devices, and for both memory and memristor applications.
Details
| Original language | English |
|---|---|
| Pages (from-to) | 593-599 |
| Number of pages | 7 |
| Journal | IEEE journal of the Electron Devices Society |
| Volume | 10 |
| Publication status | Published - 2022 |
| Peer-reviewed | Yes |
External IDs
| Mendeley | 07e7e94d-f884-3026-b85d-8a1e5a077f9a |
|---|---|
| unpaywall | 10.1109/jeds.2022.3171217 |
| ORCID | /0000-0003-3814-0378/work/116820588 |
| WOS | 000836630300005 |
| Scopus | 85129606970 |
Keywords
DFG Classification of Subject Areas according to Review Boards
ASJC Scopus subject areas
Keywords
- Dielectrics, Electrodes, FTJ, Ferroelectric tunnel junction, Films, HZO, Memristors, Switches, Tin, Tunneling, artificial intelligence, charge trapping, interfacial charge, neuromoprhic computing, polarization switching, synaptic memristor, Neuromoprhic Computing, Synaptic Memristor, Ferroelectric Tunnel Juction, Interfacial charge, Charge trapping, Polarization switching, Artificial Intelligence.