IEEE Journal of the Electron Devices Society
ISSNs: 2168-6734
IEEE, New York [u. a.]
Scopus rating (2021): CiteScore 4.7 SJR 0.574 SNIP 1.104
Indexed in DOAJ
Journal
| Titles |
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|---|---|
| ISSNs | 2168-6734 |
| Publisher | IEEE, New York [u. a.] |
| ZDB-ID | 2696552-5 |
Related content
- Research output
BEOL Integrated Ferroelectric HfO2 based Capacitors for FeRAM: Extrapolation of Reliability Performance to Use Conditions
Alcala, R., Materano, M., Lomenzo, P. D., Grenouillet, L., Francois, T., Coignus, J., Vaxelaire, N., & 5 othersCarabasse, C., Chevalliez, S., Andrieu, F., Mikolajick, T. & Schroeder, U., 2022, In: IEEE journal of the Electron Devices Society. 10, p. 907-912 6 p.Research output: Contribution to journal › Research article › Contributed › peer-review
Interplay between charge trapping and polarization switching in BEOL-compatible bilayer Ferroelectric Tunnel Junctions
Fontanini, R., Barbot, J., Segatto, M., Lancaster, S., Duong, Q., Driussi, F., Grenouillet, L., & 5 othersTriozon, L., Coignus, J., Mikolajick, T., Slesazeck, S. & Esseni, D., 2022, In: IEEE journal of the Electron Devices Society. 10, p. 593-599 7 p.Research output: Contribution to journal › Research article › Contributed › peer-review
Investigation of Recovery Phenomena in Hf0.5Zr0.5O2-based 1T1C FeRAM
Okuno, J., Yonai, T., Kunihiro, T., Shuto, Y., Alcala, R., Lederer, M., Seidel, K., & 4 othersMikolajick, T., Schroeder, U., Tsukamoto, M. & Umebayashi, T., 2022, (Accepted/In press) In: IEEE journal of the Electron Devices Society. 4 p.Research output: Contribution to journal › Research article › Contributed › peer-review
Reliability Study of 1T1C FeRAM Arrays With Hf0.5Zr0.5O Thickness Scaling
Okuno, J., Kunihiro, T., Konishi, K., Shuto, Y., Sugaya, F., Materano, M., Ali, T., & 7 othersLederer, M., Kuehnel, K., Seidel, K., Mikolajick, T., Schroeder, U., Tsukamoto, M. & Umebayashi, T., 2022, In: IEEE journal of the Electron Devices Society. 10, p. 778-783 6 p.Research output: Contribution to journal › Research article › Contributed › peer-review
1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline
Okuno, J., Kunihiro, T., Konishi, K., Materano, M., Ali, T., Kuehnel, K., Seidel, K., & 4 othersMikolajick, T., Schroeder, U., Tsukamoto, M. & Umebayashi, T., 19 Nov 2021, In: IEEE journal of the Electron Devices Society. 10, p. 29-34 6 p.Research output: Contribution to journal › Research article › Contributed › peer-review