In-situ study of the TDDB-induced damage mechanism in Cu/ultra-low-k interconnect structures
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Details
Original language | English |
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Pages (from-to) | 47-53 |
Number of pages | 7 |
Journal | Microelectronic Engineering |
Volume | 137 |
Publication status | Published - 2 Apr 2015 |
Peer-reviewed | Yes |
External IDs
Scopus | 85027938378 |
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