Influence of statistical dopant fluctuations on MOS transistors with deep submicron channel lengths

Research output: Contribution to journal › Research article › Contributed › peer-review

Contributors

Details

Original languageEnglish
Pages (from-to)419-422
Number of pages4
JournalMicroelectronic Engineering
Volume21
Issue number1-4
Publication statusPublished - 1993
Peer-reviewedYes

External IDs

Scopus 0027578886

Keywords

Library keywords