Impact of postdeposition annealing upon film properties of atomic layer deposition-grown Al2O3 on GaN

Research output: Contribution to journalResearch articleContributedpeer-review

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Details

Original languageEnglish
Article number01A106
Journal Journal of vacuum science & technology : JVST ; B, Nanotechnology & microelectronics : materials, processing, measurement, & phenomena
Volume33
Issue number1
Publication statusPublished - 29 Dec 2014
Peer-reviewedYes

External IDs

WOS 000348915500006