Impact of postdeposition annealing upon film properties of atomic layer deposition-grown Al2O3 on GaN
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Details
Original language | English |
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Article number | 01A106 |
Journal | Journal of vacuum science & technology : JVST ; B, Nanotechnology & microelectronics : materials, processing, measurement, & phenomena |
Volume | 33 |
Issue number | 1 |
Publication status | Published - 29 Dec 2014 |
Peer-reviewed | Yes |
External IDs
WOS | 000348915500006 |
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