High-k/GaN interface engineering toward AlGaN/GaN MIS-HEMT with improved Vth stability

Research output: Contribution to journal › Research article › Contributed › peer-review

Contributors

  • N. Szabó - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • A. Wachowiak - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • A. Winzer - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • J. Ocker - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • J. Gärtner - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • R. Hentschel - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • A. Schmid - , Freiberg University of Mining and Technology (Author)
  • T. Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH (Author)

Details

Original languageEnglish
Article number01A102
Journal Journal of vacuum science & technology : JVST ; B, Nanotechnology & microelectronics : materials, processing, measurement, & phenomena
Volume35
Publication statusPublished - 18 Nov 2016
Peer-reviewedYes

External IDs

Scopus 84994753025

Keywords

Library keywords