Ga contamination in silicon by Focused Ion Beam milling: Dynamic model simulation and Atom Probe Tomography experiment

Research output: Contribution to journal › Research article › Contributed › peer-review

Contributors

Details

Original languageEnglish
Pages (from-to)390-392
Number of pages3
JournalMicroelectronics Reliability
Volume64
Publication statusPublished - 2016
Peer-reviewedYes

External IDs

Scopus 84991672313

Keywords