Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories

Research output: Contribution to book/Conference proceedings/Anthology/ReportConference contributionContributedpeer-review

Contributors

Details

Original languageEnglish
Title of host publicationIEDM
Publication statusPublished - 2013
Peer-reviewedYes

External IDs

Scopus 84894297755

Keywords