Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories
Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review
Contributors
Details
Original language | English |
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Title of host publication | IEDM |
Publication status | Published - 2013 |
Peer-reviewed | Yes |
External IDs
Scopus | 84894297755 |
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