The increase in operation temperature for recent and future wide bandgap power semiconductors drives the need for a reliable high temperature interconnect technology. Low pressure silver sintering has emerged as a promising method to create such interconnects. Recently, copper got into focus as a sintering material in power electronics due to its lower cost at comparable electrical and thermal conductivity and lower tendency to electromigration. Due to the strong oxidation tendency of copper, sintering processes are preferably conducted under very clean inert or even reductive atmospheres. In this paper methods are investigated and discussed to create copper sinter interconnects in nitrogen purged environments. Reliable interconnects could be formed without reductive atmosphere. The shear strength of the fabricated interconnects could be further increased by surface modifications.