Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells

Research output: Contribution to book/Conference proceedings/Anthology/ReportConference contributionContributedpeer-review

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Details

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
Publication statusPublished - 2015
Peer-reviewedYes

External IDs

Scopus 84964067792

Keywords