Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells
Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review
Contributors
Details
Original language | English |
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Title of host publication | Technical Digest - International Electron Devices Meeting, IEDM |
Publication status | Published - 2015 |
Peer-reviewed | Yes |
External IDs
Scopus | 84964067792 |
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