Correlation between the macroscopic ferroelectric material properties of Si:HfO<inf>2</inf>and the statistics of 28 nm FeFET memory arrays
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Details
| Original language | English |
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| Pages (from-to) | 42-51 |
| Number of pages | 10 |
| Journal | Ferroelectrics |
| Volume | 497 |
| Issue number | 1 |
| Publication status | Published - 2016 |
| Peer-reviewed | Yes |
External IDs
| Scopus | 84969567622 |
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