Correlation between the macroscopic ferroelectric material properties of Si:HfO2 and the statistics of 28 nm FeFET memory arrays

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

  • S. Mueller - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • S. Slesazeck - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • S. Henker - , Chair of Highly-Parallel VLSI Systems and Neuro-Microelectronics (Author)
  • S. Flachowsky - , Global Foundries Dresden (Author)
  • P. Polakowski - , Fraunhofer Institute for Photonic Microsystems (Author)
  • J. Paul - , Fraunhofer Institute for Photonic Microsystems (Author)
  • Elliot Smith - , Global Foundries Dresden (Author)
  • J. Müller - , Fraunhofer Institute for Photonic Microsystems (Author)
  • T. Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH (Author)

Details

Original languageEnglish
Pages (from-to)42-51
Number of pages10
JournalFerroelectrics
Volume497
Issue number1
Publication statusPublished - 2016
Peer-reviewedYes

External IDs

Scopus 84969567622