Comparative Study of Reliability of Ferroelectric and Anti-Ferroelectric Memories
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Details
| Original language | English |
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| Pages (from-to) | 154-162 |
| Number of pages | 9 |
| Journal | IEEE transactions on device and materials reliability |
| Volume | 18 |
| Issue number | 2 |
| Publication status | Published - Jun 2018 |
| Peer-reviewed | Yes |
External IDs
| Scopus | 85045732687 |
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