BEOL Integrated Ferroelectric HfO2 based Capacitors for FeRAM: Extrapolation of Reliability Performance to Use Conditions

Research output: Contribution to journalResearch articleContributedpeer-review


  • R. Alcala - , Chair of Nanoelectronics (Author)
  • M. Materano - , Chair of Nanoelectronics (Author)
  • P. D. Lomenzo - , Dresden University of Technology (Author)
  • L. Grenouillet - , Université Grenoble Alpes (Author)
  • T. Francois - , Université Grenoble Alpes (Author)
  • J. Coignus - , Université Grenoble Alpes (Author)
  • N. Vaxelaire - , Université Grenoble Alpes (Author)
  • C. Carabasse - , Université Grenoble Alpes (Author)
  • S. Chevalliez - , Université Grenoble Alpes (Author)
  • F. Andrieu - , Université Grenoble Alpes (Author)
  • T. Mikolajick - , Chair of Nanoelectronics (Author)
  • U. Schroeder - , Dresden University of Technology (Author)


Si doped HfO2 based ferroelectric capacitors integrated into Back-End-Of-Line (BEOL) 130 nm CMOS technology were investigated in regard to critical reliability parameters for their implementation in non-volatile one-transistor one-capacitor ferroelectric random-access memory applications. The assessed reliability parameters are electric field, capacitor area, and temperature and are evaluated on single and parallel structured capacitors to understand their respective impact on wake-up, fatigue, imprint, and retention.


Original languageEnglish
Pages (from-to)907-912
Number of pages6
JournalIEEE journal of the Electron Devices Society
Early online date11 Aug 2022
Publication statusPublished - 2022

External IDs

Mendeley 9470e9e2-8f81-331a-8e66-efcdc6554fc6
ORCID /0000-0003-3814-0378/work/142256153


DFG Classification of Subject Areas according to Review Boards


  • BEOL, Capacitors, Electric fields, Ferroelectric, Ferroelectric films, HfO2, Nonvolatile memory, Random access memory, Reliability, Temperature measurement, reliability, ferroelectric, HfO'