BEOL Integrated Ferroelectric HfO2 based Capacitors for FeRAM: Extrapolation of Reliability Performance to Use Conditions
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Abstract
Si doped HfO2 based ferroelectric capacitors integrated into Back-End-Of-Line (BEOL) 130 nm CMOS technology were investigated in regard to critical reliability parameters for their implementation in non-volatile one-transistor one-capacitor ferroelectric random-access memory applications. The assessed reliability parameters are electric field, capacitor area, and temperature and are evaluated on single and parallel structured capacitors to understand their respective impact on wake-up, fatigue, imprint, and retention.
Details
| Original language | English |
|---|---|
| Pages (from-to) | 907-912 |
| Number of pages | 6 |
| Journal | IEEE journal of the Electron Devices Society |
| Volume | 10 |
| Early online date | 11 Aug 2022 |
| Publication status | Published - 2022 |
| Peer-reviewed | Yes |
External IDs
| Mendeley | 9470e9e2-8f81-331a-8e66-efcdc6554fc6 |
|---|---|
| ORCID | /0000-0003-3814-0378/work/142256153 |
Keywords
Research priority areas of TU Dresden
DFG Classification of Subject Areas according to Review Boards
ASJC Scopus subject areas
Keywords
- BEOL, Capacitors, Electric fields, Ferroelectric, Ferroelectric films, HfO2, Nonvolatile memory, Random access memory, Reliability, Temperature measurement, reliability, ferroelectric, HfO'