Si doped HfO2 based ferroelectric capacitors integrated into Back-End-Of-Line (BEOL) 130 nm CMOS technology were investigated in regard to critical reliability parameters for their implementation in non-volatile one-transistor one-capacitor ferroelectric random-access memory applications. The assessed reliability parameters are electric field, capacitor area, and temperature and are evaluated on single and parallel structured capacitors to understand their respective impact on wake-up, fatigue, imprint, and retention.
|Number of pages||6|
|Journal||IEEE journal of the Electron Devices Society|
|Early online date||11 Aug 2022|
|Publication status||Published - 2022|
DFG Classification of Subject Areas according to Review Boards
ASJC Scopus subject areas
- BEOL, Capacitors, Electric fields, Ferroelectric, Ferroelectric films, HfO2, Nonvolatile memory, Random access memory, Reliability, Temperature measurement, reliability, ferroelectric, HfO'