BEOL Integrated Ferroelectric HfO2 based Capacitors for FeRAM: Extrapolation of Reliability Performance to Use Conditions

Publikation: Beitrag in FachzeitschriftForschungsartikelBeigetragenBegutachtung


  • R. Alcala - , Professur für Nanoelektronik (Autor:in)
  • M. Materano - , Professur für Nanoelektronik (Autor:in)
  • P. D. Lomenzo - , Technische Universität Dresden (Autor:in)
  • L. Grenouillet - , Université Grenoble Alpes (Autor:in)
  • T. Francois - , Université Grenoble Alpes (Autor:in)
  • J. Coignus - , Université Grenoble Alpes (Autor:in)
  • N. Vaxelaire - , Université Grenoble Alpes (Autor:in)
  • C. Carabasse - , Université Grenoble Alpes (Autor:in)
  • S. Chevalliez - , Université Grenoble Alpes (Autor:in)
  • F. Andrieu - , Université Grenoble Alpes (Autor:in)
  • T. Mikolajick - , Professur für Nanoelektronik (Autor:in)
  • U. Schroeder - , Technische Universität Dresden (Autor:in)


Si doped HfO2 based ferroelectric capacitors integrated into Back-End-Of-Line (BEOL) 130 nm CMOS technology were investigated in regard to critical reliability parameters for their implementation in non-volatile one-transistor one-capacitor ferroelectric random-access memory applications. The assessed reliability parameters are electric field, capacitor area, and temperature and are evaluated on single and parallel structured capacitors to understand their respective impact on wake-up, fatigue, imprint, and retention.


Seiten (von - bis)907-912
FachzeitschriftIEEE journal of the Electron Devices Society
Frühes Online-Datum11 Aug. 2022
PublikationsstatusVeröffentlicht - 2022

Externe IDs

Mendeley 9470e9e2-8f81-331a-8e66-efcdc6554fc6
ORCID /0000-0003-3814-0378/work/142256153



  • BEOL, Capacitors, Electric fields, Ferroelectric, Ferroelectric films, HfO2, Nonvolatile memory, Random access memory, Reliability, Temperature measurement, reliability, ferroelectric, HfO'