Analog resistive switching behavior of Al/Nb2O5/Al device

Research output: Contribution to journal › Research article › Contributed › peer-review

Contributors

  • H. Mähne - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • H. Wylezich - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • F. Hanzig - , Freiberg University of Mining and Technology (Author)
  • Stefan Slesazeck - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • D. Rafaja - , Freiberg University of Mining and Technology (Author)
  • T. Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH (Author)

Details

Original languageEnglish
Article number104002
JournalSemiconductor science and technology
Volume29
Issue number10
Publication statusPublished - 2014
Peer-reviewedYes

External IDs

Scopus 84907211036

Keywords

Library keywords