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Research Portal of the TU Dresden

Semiconductor Science and Technology

ISSNs: 0268-1242

Additional searchable ISSN (electronic): 1361-6641

IOP Publishing Ltd.

Scopus rating (2023): CiteScore 4.3 SJR 0.411 SNIP 0.741

Journal

Titles	Semiconductor Science and Technology Semiconductor science and technology
ISSNs	0268-1242
Additional searchable ISSN (electronic)	1361-6641
Publisher	IOP Publishing Ltd.
ZDB-ID	54647-1
ZDB-ID	1361285-2

Keywords

ASJC Scopus subject areas

Library keywords

620 Engineering and allied operations
530 Physics

Related content

Research output

Dependence of reverse leakage on the edge termination process in vertical GaN power device

Xie, T., da Silva, C., Szabó, N., Mikolajick, T. & Wachowiak, A., Jan 2023, In: Semiconductor science and technology. 38, 1, 7 p., 015014.

Research output: Contribution to journal › Research article › Contributed › peer-review

Influence of fabrication parameters on the magnetic and structural properties of Mn₅Ge₃

Xie, Y., Li, Z., Begeza, V., Funk, H. S., Fischer, I. A., Zeng, Y. J., Helm, M., & 2 othersZhou, S. & Prucnal, S., Jun 2022, In: Semiconductor science and technology. 37, 6, 065009.

Research output: Contribution to journal › Research article › Contributed › peer-review

Single-step reactive ion etching process for device integration of hafnium-zirconium-oxide (HZO)/titanium nitride (TiN) stacks

Mauersberger, T., Trommer, J., Sharma, S., Knaut, M., Pohl, D., Rellinghaus, B., Mikolajick, T., & 1 othersHeinzig, A., 1 Sept 2021, In: Semiconductor science and technology. 36, 9, 6 p., 095025.

Research output: Contribution to journal › Research article › Contributed › peer-review

Material investigations for improving stability of Au free Ta/Al-based ohmic contacts annealed at low temperature for AlGaN/GaN heterostructures

Calzolaro, A., Hentschel, R., Edokam, I. F., Sizov, V., Mikolajick, T. & Wachowiak, A., Jul 2020, In: Semiconductor science and technology. 35, 7, 075011.

Research output: Contribution to journal › Research article › Contributed › peer-review

Improvement of NbO _x-based threshold switching devices by implementing multilayer stacks

Herzig, M., Weiher, M., Ascoli, A., Tetzlaff, R., Mikolajick, T. & Slesazeck, S., 6 Jun 2019, In: Semiconductor science and technology. 34, 7, 075005.

Research output: Contribution to journal › Research article › Contributed › peer-review

View all research output (17)