Wake-Up Mechanisms in Ferroelectric Lanthanum-Doped Hf0.5Zr0.5O2 Thin Films
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Abstract
Since the discovery of ferroelectricity in thin doped hafnium oxide layers, there is a rapidly growing interest in the implementation of this material into nonvolatile memory devices such as ferroelectric capacitors, transistors, or tunnel junctions. In most cases, a field-cycling-induced change in the remanent polarization is attributed to wake-up and fatigue in ferroelectric HfO2 devices. The lanthanum-doped hafnium/zirconium mixed oxide system is of broad interest due to its high endurance stability and low crystallization temperature which is necessary for low thermal budget, back-end of line devices. Herein, a detailed temperature-dependent field-cycling study is performed in a wide temperature range from liquid nitrogen to room temperature to separate field-cycling-induced charge movements from phase change effects. Results are expected to be relevant for similar doped HfO2 ferroelectric layers.
Details
Original language | English |
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Article number | 2000281 |
Journal | Physica Status Solidi (A) Applications and Materials Science |
Volume | 217 |
Issue number | 22 |
Publication status | Published - Nov 2020 |
Peer-reviewed | Yes |
External IDs
ORCID | /0000-0003-3814-0378/work/142256204 |
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Keywords
ASJC Scopus subject areas
Keywords
- depolarization fields, ferroelectric layers, HfO, lanthanum, wake-up mechanisms