Wake-Up Mechanisms in Ferroelectric Lanthanum-Doped Hf0.5Zr0.5O2 Thin Films

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Since the discovery of ferroelectricity in thin doped hafnium oxide layers, there is a rapidly growing interest in the implementation of this material into nonvolatile memory devices such as ferroelectric capacitors, transistors, or tunnel junctions. In most cases, a field-cycling-induced change in the remanent polarization is attributed to wake-up and fatigue in ferroelectric HfO2 devices. The lanthanum-doped hafnium/zirconium mixed oxide system is of broad interest due to its high endurance stability and low crystallization temperature which is necessary for low thermal budget, back-end of line devices. Herein, a detailed temperature-dependent field-cycling study is performed in a wide temperature range from liquid nitrogen to room temperature to separate field-cycling-induced charge movements from phase change effects. Results are expected to be relevant for similar doped HfO2 ferroelectric layers.


Original languageEnglish
Article number2000281
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number22
Publication statusPublished - Nov 2020

External IDs

ORCID /0000-0003-3814-0378/work/142256204