Since the discovery of ferroelectricity in thin doped hafnium oxide layers, there is a rapidly growing interest in the implementation of this material into nonvolatile memory devices such as ferroelectric capacitors, transistors, or tunnel junctions. In most cases, a field-cycling-induced change in the remanent polarization is attributed to wake-up and fatigue in ferroelectric HfO₂ devices. The lanthanum-doped hafnium/zirconium mixed oxide system is of broad interest due to its high endurance stability and low crystallization temperature which is necessary for low thermal budget, back-end of line devices. Herein, a detailed temperature-dependent field-cycling study is performed in a wide temperature range from liquid nitrogen to room temperature to separate field-cycling-induced charge movements from phase change effects. Results are expected to be relevant for similar doped HfO₂ ferroelectric layers.