Towards scalable reconfigurable field effect transistor using flash lamp annealing
Research output: Contribution to conferences › Paper › Contributed › peer-review
Contributors
Abstract
For decades the miniaturization of logic circuitry was a result of down scaling of the field effect transistor (FET). This scaling has reached its end and, therefore, new device materials and concepts have been under research for the last years. One approach is to increase the functionality of an individual device rather than scaling down its size. Such a device concept is the reconfigurable FET (RFET), which can be configured to n- or p- polarity dynamically [1].
Details
| Original language | English |
|---|---|
| Publication status | Published - Jun 2020 |
| Peer-reviewed | Yes |
Conference
| Title | 2020 Device Research Conference, DRC 2020 |
|---|---|
| Duration | 21 - 24 June 2020 |
| City | Columbus |
| Country | United States of America |
External IDs
| ORCID | /0000-0003-3814-0378/work/142256205 |
|---|