Towards scalable reconfigurable field effect transistor using flash lamp annealing

Research output: Contribution to conferencesPaperContributedpeer-review

Contributors

Abstract

For decades the miniaturization of logic circuitry was a result of down scaling of the field effect transistor (FET). This scaling has reached its end and, therefore, new device materials and concepts have been under research for the last years. One approach is to increase the functionality of an individual device rather than scaling down its size. Such a device concept is the reconfigurable FET (RFET), which can be configured to n- or p- polarity dynamically [1].

Details

Original languageEnglish
Publication statusPublished - Jun 2020
Peer-reviewedYes

Conference

Title2020 Device Research Conference, DRC 2020
Duration21 - 24 June 2020
CityColumbus
CountryUnited States of America

External IDs

ORCID /0000-0003-3814-0378/work/142256205

Keywords

ASJC Scopus subject areas