Towards scalable reconfigurable field effect transistor using flash lamp annealing

Publikation: Beitrag zu KonferenzenPaperBeigetragenBegutachtung

Beitragende

Abstract

For decades the miniaturization of logic circuitry was a result of down scaling of the field effect transistor (FET). This scaling has reached its end and, therefore, new device materials and concepts have been under research for the last years. One approach is to increase the functionality of an individual device rather than scaling down its size. Such a device concept is the reconfigurable FET (RFET), which can be configured to n- or p- polarity dynamically [1].

Details

OriginalspracheEnglisch
PublikationsstatusVeröffentlicht - Juni 2020
Peer-Review-StatusJa

Konferenz

Titel2020 Device Research Conference, DRC 2020
Dauer21 - 24 Juni 2020
StadtColumbus
LandUSA/Vereinigte Staaten

Externe IDs

ORCID /0000-0003-3814-0378/work/142256205

Schlagworte

ASJC Scopus Sachgebiete