Thickness dependent morphology and electrical characteristics of SrBi 2Ta2O9 deposited by metal organic decomposition

Research output: Contribution to journal › Conference article › Contributed › peer-review

Contributors

  • Manfred Mört - , Infineon Technologies AG (Author)
  • Nicolas Nagel - , Infineon Technologies AG (Author)
  • Gïnther Schindler - , Infineon Technologies AG (Author)
  • Thomas Mikolajick - , Infineon Technologies AG (Author)
  • Walter Hartner - , Infineon Technologies AG (Author)
  • Marcus J. Kastner - , Infineon Technologies AG (Author)
  • Christine Dehm - , Infineon Technologies AG (Author)
  • Hermann Kohlstedt - , RWTH Aachen University (Author)
  • Rainer Waser - , RWTH Aachen University (Author)

Abstract

The dependence of morphology of SrBi2Ta2O9 (SBT) deposited by Metal Organic Decomposition (MOD) on film thickness and annealing temperature during the crystallization anneal was investigated. From Atomic Force Microscope (AFM) images of these films it can be seen that nucleation and grain growth strongly depends on SBT thickness which also affects the electrical characteristics of the correspondent Pt/SBT/Pt-capacitors. In this work results of a morphological study of SBT films with thicknesses between 40 and 110nm and annealing temperatures between 650C and 725C will be presented.

Details

Original languageEnglish
Pages (from-to)125-134
Number of pages10
JournalIntegrated Ferroelectrics
Volume37
Issue number1-4
Publication statusPublished - 2001
Peer-reviewedYes
Externally publishedYes

Conference

Title13th International Symposium on Integrated Ferroelectrics
Duration11 - 14 March 2001
CityColorado Springs, CO
CountryUnited States of America

External IDs

ORCID /0000-0003-3814-0378/work/156338414

Keywords

ASJC Scopus subject areas

Keywords

  • Crystallization, Ferroelectric, Grain, Nucleation, SBT, Thickness