Thickness dependent morphology and electrical characteristics of SrBi 2Ta2O9 deposited by metal organic decomposition
Publikation: Beitrag in Fachzeitschrift › Konferenzartikel › Beigetragen › Begutachtung
Beitragende
Abstract
The dependence of morphology of SrBi2Ta2O9 (SBT) deposited by Metal Organic Decomposition (MOD) on film thickness and annealing temperature during the crystallization anneal was investigated. From Atomic Force Microscope (AFM) images of these films it can be seen that nucleation and grain growth strongly depends on SBT thickness which also affects the electrical characteristics of the correspondent Pt/SBT/Pt-capacitors. In this work results of a morphological study of SBT films with thicknesses between 40 and 110nm and annealing temperatures between 650C and 725C will be presented.
Details
Originalsprache | Englisch |
---|---|
Seiten (von - bis) | 125-134 |
Seitenumfang | 10 |
Fachzeitschrift | Integrated Ferroelectrics |
Jahrgang | 37 |
Ausgabenummer | 1-4 |
Publikationsstatus | Veröffentlicht - 2001 |
Peer-Review-Status | Ja |
Extern publiziert | Ja |
Konferenz
Titel | 13th International Symposium on Integrated Ferroelectrics |
---|---|
Dauer | 11 - 14 März 2001 |
Stadt | Colorado Springs, CO |
Land | USA/Vereinigte Staaten |
Externe IDs
ORCID | /0000-0003-3814-0378/work/156338414 |
---|
Schlagworte
ASJC Scopus Sachgebiete
Schlagwörter
- Crystallization, Ferroelectric, Grain, Nucleation, SBT, Thickness