Thickness dependent morphology and electrical characteristics of SrBi 2Ta2O9 deposited by metal organic decomposition

Publikation: Beitrag in FachzeitschriftKonferenzartikelBeigetragenBegutachtung

Beitragende

  • Manfred Mört - , Infineon Technologies AG (Autor:in)
  • Nicolas Nagel - , Infineon Technologies AG (Autor:in)
  • Gïnther Schindler - , Infineon Technologies AG (Autor:in)
  • Thomas Mikolajick - , Infineon Technologies AG (Autor:in)
  • Walter Hartner - , Infineon Technologies AG (Autor:in)
  • Marcus J. Kastner - , Infineon Technologies AG (Autor:in)
  • Christine Dehm - , Infineon Technologies AG (Autor:in)
  • Hermann Kohlstedt - , Rheinisch-Westfälische Technische Hochschule Aachen (Autor:in)
  • Rainer Waser - , Rheinisch-Westfälische Technische Hochschule Aachen (Autor:in)

Abstract

The dependence of morphology of SrBi2Ta2O9 (SBT) deposited by Metal Organic Decomposition (MOD) on film thickness and annealing temperature during the crystallization anneal was investigated. From Atomic Force Microscope (AFM) images of these films it can be seen that nucleation and grain growth strongly depends on SBT thickness which also affects the electrical characteristics of the correspondent Pt/SBT/Pt-capacitors. In this work results of a morphological study of SBT films with thicknesses between 40 and 110nm and annealing temperatures between 650C and 725C will be presented.

Details

OriginalspracheEnglisch
Seiten (von - bis)125-134
Seitenumfang10
FachzeitschriftIntegrated Ferroelectrics
Jahrgang37
Ausgabenummer1-4
PublikationsstatusVeröffentlicht - 2001
Peer-Review-StatusJa
Extern publiziertJa

Konferenz

Titel13th International Symposium on Integrated Ferroelectrics
Dauer11 - 14 März 2001
StadtColorado Springs, CO
LandUSA/Vereinigte Staaten

Externe IDs

ORCID /0000-0003-3814-0378/work/156338414