The Case for Ferroelectrics in Future Memory Devices

Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review

Contributors

  • Thomas Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH, TUD Dresden University of Technology (Author)
  • Uwe Schroeder - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • Stefan Slesazeck - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)

Abstract

Ferroelectrics are an excellent material choice for realizing nonvolatile memories with low write power. Based on the readout procedure, three different ferroelectric memory concepts can be discriminated: FeRAM, FeFET and FTJ. In this paper, the applicability of the three different concepts towards the main memory application categories as well as the applicability towards non von-Neumann computing solutions is discussed.

Details

Original languageEnglish
Title of host publication2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
ISBN (electronic)978-1-7281-8176-9
ISBN (print)978-1-7281-8177-6
Publication statusPublished - 8 Apr 2021
Peer-reviewedYes

Publication series

SeriesIEEE Electron Devices Technology and Manufacturing Conference (EDTM)

Conference

Title5th IEEE Electron Devices Technology and Manufacturing Conference
SubtitleIntelligent Technologies for Smart and Connected Life
Abbreviated titleEDTM 2021
Conference number5
Duration8 - 11 April 2021
Website
LocationCentury City International Convention Centre & Online
CityChengdu
CountryChina

External IDs

ORCID /0000-0003-3814-0378/work/142256263

Keywords

ASJC Scopus subject areas

Keywords

  • FeFET, FeRAM, Ferroelectrics, FTJ