The Case for Ferroelectrics in Future Memory Devices

Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/Gutachten › Beitrag in Konferenzband › Beigetragen › Begutachtung

Beitragende

  • Thomas Mikolajick - , Professur für Nanoelektronik, NaMLab - Nanoelectronic materials laboratory gGmbH, Technische Universität Dresden (Autor:in)
  • Uwe Schroeder - , NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • Stefan Slesazeck - , NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)

Abstract

Ferroelectrics are an excellent material choice for realizing nonvolatile memories with low write power. Based on the readout procedure, three different ferroelectric memory concepts can be discriminated: FeRAM, FeFET and FTJ. In this paper, the applicability of the three different concepts towards the main memory application categories as well as the applicability towards non von-Neumann computing solutions is discussed.

Details

OriginalspracheEnglisch
Titel2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
Herausgeber (Verlag)IEEE, New York [u. a.]
ISBN (elektronisch)978-1-7281-8176-9
ISBN (Print)978-1-7281-8177-6
PublikationsstatusVeröffentlicht - 8 Apr. 2021
Peer-Review-StatusJa

Publikationsreihe

ReiheIEEE Electron Devices Technology and Manufacturing Conference (EDTM)

Konferenz

Titel5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
Dauer8 - 11 April 2021
StadtChengdu
LandChina

Externe IDs

ORCID /0000-0003-3814-0378/work/142256263

Schlagworte

ASJC Scopus Sachgebiete

Schlagwörter

  • FeFET, FeRAM, Ferroelectrics, FTJ