Ten-Nanometer Ferroelectric Si:HfO2 Films for Next-Generation FRAM Capacitors
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Details
| Original language | English |
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| Pages (from-to) | 1300 - 1302 |
| Number of pages | 3 |
| Journal | IEEE electron device letters |
| Volume | 33 |
| Issue number | 9 |
| Publication status | Published - 2012 |
| Peer-reviewed | Yes |
External IDs
| Scopus | 84865431003 |
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