Since the discovery of ferroelectricity in doped HfO₂ and ZrO₂ thin films over a decade ago, fluorite-structured ferroelectric thin films have attracted much research attention due to their excellent scalability and complementary metal-oxide semiconductor compatibility compared to conventional perovskite ferroelectric materials. Although various factors influencing the formation of the ferroelectric properties are identified, a clear understanding of the causes of the phase formation have been difficult to determine. In this work, ZrO₂ films deposited by atomic layer deposition and chemical solution deposition have resulted in films with completely different structural properties. Regardless of these differences, a general relationship between strain and phase formation is established, leading to a more unified understanding of ferroelectric phase formation in undoped ZrO₂ films, which can be applied to other fluorite-structured films.