Single Transistor Analog Building Blocks: Exploiting Back-Bias Reconfigurable Devices
Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review
Contributors
Abstract
Reconfigurable Field Effect Transistors (RFETs) combine P-FET and N-FET properties on a single device, enabling the development of new circuit applications. In this paper, we present SPICE simulations of analog building blocks using a Verilog-A Table Model of a new RFET variant, called Back-Bias RFETs (BB-RFETs). The Verilog-A look-up model is extracted from TCAD simulations based on a previously fabricated and measured BB-RFET device on a 22 nm FDSOI platform. The model is verified to mimic the experimentally observed analog circuit behaviours such as frequency doubling and phase shifting from a single transistor setup. In addition, utilizing the reconfiguration between three operational modes, a newly conceived reconfigurable-rectifier is proposed which can be dynamically switched between half-wave rectifier and full-wave rectifier. Both the model and the newly designed circuit building blocks, therefore, aim to inspire circuit designers to utilize this emerging technology for future computing.
Details
| Original language | English |
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| Title of host publication | 2023 21st IEEE Interregional NEWCAS Conference (NEWCAS) |
| Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| Pages | 1-5 |
| ISBN (electronic) | 979-8-3503-0024-6 |
| ISBN (print) | 979-8-3503-0025-3 |
| Publication status | Published - 2023 |
| Peer-reviewed | Yes |
Publication series
| Series | Annual IEEE Northeast Workshop on Circuits and Systems (NEWCAS) |
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Conference
| Title | 21st IEEE Interregional NEWCAS Conference |
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| Abbreviated title | NEWCAS 2023 |
| Conference number | 21 |
| Duration | 26 - 28 June 2023 |
| Website | |
| Degree of recognition | International event |
| Location | John McIntyre Conference Centre |
| City | Edinburgh |
| Country | United Kingdom |
External IDs
| ORCID | /0000-0003-3814-0378/work/144255460 |
|---|---|
| dblp | conf/newcas/BhattacharjeeRHMT23 |
Keywords
ASJC Scopus subject areas
Keywords
- 22 nm FDSOI, Analog Circuits, Back-Bias, Cadence Virtuoso, Reconfigurable Field Effect Transistors, TCAD