Single Transistor Analog Building Blocks: Exploiting Back-Bias Reconfigurable Devices

Publikation: Beitrag in Buch/Konferenzbericht/Sammelband/GutachtenBeitrag in KonferenzbandBeigetragenBegutachtung

Beitragende

  • Niladri Bhattacharjee - , NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • Maximilian Reuter - , Technische Universität Darmstadt (Autor:in)
  • Klaus Hofmann - , Technische Universität Darmstadt (Autor:in)
  • Thomas Mikolajick - , Professur für Nanoelektronik, NaMLab - Nanoelectronic materials laboratory gGmbH, Technische Universität Dresden (Autor:in)
  • Jens Trommer - , Fakultät Elektrotechnik und Informationstechnik, NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)

Abstract

Reconfigurable Field Effect Transistors (RFETs) combine P-FET and N-FET properties on a single device, enabling the development of new circuit applications. In this paper, we present SPICE simulations of analog building blocks using a Verilog-A Table Model of a new RFET variant, called Back-Bias RFETs (BB-RFETs). The Verilog-A look-up model is extracted from TCAD simulations based on a previously fabricated and measured BB-RFET device on a 22 nm FDSOI platform. The model is verified to mimic the experimentally observed analog circuit behaviours such as frequency doubling and phase shifting from a single transistor setup. In addition, utilizing the reconfiguration between three operational modes, a newly conceived reconfigurable-rectifier is proposed which can be dynamically switched between half-wave rectifier and full-wave rectifier. Both the model and the newly designed circuit building blocks, therefore, aim to inspire circuit designers to utilize this emerging technology for future computing.

Details

OriginalspracheEnglisch
Titel2023 21st IEEE Interregional NEWCAS Conference (NEWCAS)
Herausgeber (Verlag)Institute of Electrical and Electronics Engineers (IEEE)
Seiten1-5
ISBN (elektronisch)979-8-3503-0024-6
ISBN (Print)979-8-3503-0025-3
PublikationsstatusVeröffentlicht - 2023
Peer-Review-StatusJa

Publikationsreihe

ReiheAnnual IEEE Northeast Workshop on Circuits and Systems (NEWCAS)

Konferenz

Titel21st IEEE Interregional NEWCAS Conference
KurztitelNEWCAS 2023
Veranstaltungsnummer21
Dauer26 - 28 Juni 2023
Webseite
BekanntheitsgradInternationale Veranstaltung
OrtJohn McIntyre Conference Centre
StadtEdinburgh
LandGroßbritannien/Vereinigtes Königreich

Externe IDs

ORCID /0000-0003-3814-0378/work/144255460
dblp conf/newcas/BhattacharjeeRHMT23

Schlagworte

Schlagwörter

  • 22 nm FDSOI, Analog Circuits, Back-Bias, Cadence Virtuoso, Reconfigurable Field Effect Transistors, TCAD