Silicon and germanium nanoclusters embedded in zirconium dioxide matrices

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

  • F. Benner - , NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • S. Haas - , Freiberg University of Mining and Technology, Chemnitz University of Technology (Author)
  • F. Schneider - , Freiberg University of Mining and Technology (Author)
  • V. Klemm - , Freiberg University of Mining and Technology (Author)
  • G. Schreiber - , Freiberg University of Mining and Technology (Author)
  • J. Von Borany - , Helmholtz-Zentrum Dresden-Rossendorf (Author)
  • T. Mikolajick - , Chair of Nanoelectronics, NaMLab - Nanoelectronic materials laboratory gGmbH (Author)
  • J. Heitmann - , NaMLab - Nanoelectronic materials laboratory gGmbH, Freiberg University of Mining and Technology (Author)

Abstract

The phase separation of Si:ZrO2 and Ge:ZrO2 films in superlattice geometries were investigated by X-ray diffraction and reflectometry as well as by high resolution transmission electron microscopy. In case of the Si containing films, round-shaped clusters within a crystalline ZrO2 matrix have been observed after annealing at 1,000°C. The appearance of nanocrystalline Si could not be shown, whereas amorphous clusters within the crystalline ZrO2 matrix were formed. For the Ge containing films, the formation of nanocrystalline Ge layers was observed after annealing at 650°C. In both material systems the ZrO2 matrix crystallized in the tetragonal phase.

Details

Original languageEnglish
Pages (from-to)N135-N138
JournalECS Journal of Solid State Science and Technology
Volume1
Issue number6
Publication statusPublished - 2012
Peer-reviewedYes

External IDs

ORCID /0000-0003-3814-0378/work/142256323