Silicon and germanium nanoclusters embedded in zirconium dioxide matrices

Publikation: Beitrag in FachzeitschriftForschungsartikelBeigetragenBegutachtung

Beitragende

  • F. Benner - , NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • S. Haas - , Technische Universität Bergakademie Freiberg, Technische Universität Chemnitz (Autor:in)
  • F. Schneider - , Technische Universität Bergakademie Freiberg (Autor:in)
  • V. Klemm - , Technische Universität Bergakademie Freiberg (Autor:in)
  • G. Schreiber - , Technische Universität Bergakademie Freiberg (Autor:in)
  • J. Von Borany - , Helmholtz-Zentrum Dresden-Rossendorf (Autor:in)
  • T. Mikolajick - , Professur für Nanoelektronik, NaMLab - Nanoelectronic materials laboratory gGmbH (Autor:in)
  • J. Heitmann - , NaMLab - Nanoelectronic materials laboratory gGmbH, Technische Universität Bergakademie Freiberg (Autor:in)

Abstract

The phase separation of Si:ZrO2 and Ge:ZrO2 films in superlattice geometries were investigated by X-ray diffraction and reflectometry as well as by high resolution transmission electron microscopy. In case of the Si containing films, round-shaped clusters within a crystalline ZrO2 matrix have been observed after annealing at 1,000°C. The appearance of nanocrystalline Si could not be shown, whereas amorphous clusters within the crystalline ZrO2 matrix were formed. For the Ge containing films, the formation of nanocrystalline Ge layers was observed after annealing at 650°C. In both material systems the ZrO2 matrix crystallized in the tetragonal phase.

Details

OriginalspracheEnglisch
Seiten (von - bis)N135-N138
FachzeitschriftECS Journal of Solid State Science and Technology
Jahrgang1
Ausgabenummer6
PublikationsstatusVeröffentlicht - 2012
Peer-Review-StatusJa

Externe IDs

ORCID /0000-0003-3814-0378/work/142256323